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Amano Hiroshi | Japanese materials scientist |

Amano Hiroshi | Japanese materials scientist |

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Amano Hiroshi: Amano Hiroshi, Japanese materials scientist who was awarded the 2014 Nobel Prize in Physics for inventing blue lightemitting diodes (LEDs). He shared the prize with Japanese materials scientist Akasaki Isamu and Japaneseborn American materials scientist Shuji Nakamura. Amano became a student in

Software | NIST

Software | NIST

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Advanced options. Topic Area

Paul Scherrer Institut (PSI)

Paul Scherrer Institut (PSI)

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The Paul Scherrer Institute, PSI, is the largest research centre for natural and engineering sciences within Switzerland. We perform worldclass research in three main subject areas: Matter and Material; Energy and the Environment; and Human Health. By conducting fundamental and applied research, we work on longterm solutions for .

: Gallium Nitride (GaN) ICs and .

: Gallium Nitride (GaN) ICs and .

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is tracked by us since July, 2014. Over the time it has been ranked as high as 477 299 in the world, while most of its traffic comes from USA, where it reached as high as 156 840 position.

NuWaves Products

NuWaves Products

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The NuPower™ series of solid state power amplifier modules is ideal for extending your communiion range. Leveraging the latest Gallium Nitride .

A Peek Inside the Avogy Zolt Laptop Charger: Is GaN .

A Peek Inside the Avogy Zolt Laptop Charger: Is GaN .

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Contributed by DixonWarren. One of the tedious tasks in transporting even the newest lightweight laptop is also needing to lug the "brick" charger along with it.

Gallium

Gallium

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Element Gallium (Ga), Group 13, Atomic Number 31, pblock, Mass Sources, facts, uses, scarcity (SRI), podcasts, alchemical symbols, videos and images.

MACOM Gallium Arsenide (GaAs)

MACOM Gallium Arsenide (GaAs)

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MACOM's gallium arsenide (GaAs) control components, mixed signal processing and converters, driver amplifiers, CATV amplifiers, LNAs and power amplifiers as single purpose and multifunction MMICS, enable broadband performance over 250 GHz, high resistance, less noise dissipation and resistance to radiation damage.

Indium

Indium

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Element Indium (In), Group 13, Atomic Number 49, pblock, Mass Sources, facts, uses, scarcity (SRI), podcasts, alchemical symbols, videos and images.

GaN Power Amplifiers

GaN Power Amplifiers

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Microelectronics Products Services is now offering a line of Gallium Nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) intended for military and challenging commercial wireless, highpower amplifier appliions.

MACOM Gallium Nitride (GaN)

MACOM Gallium Nitride (GaN)

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MACOM is driving the commercialization of gallium nitride into mainstream appliion by offering a portfolio of both GaN on Silicon (Si) .

Silicon Integration Initiative | Si2 | Home

Silicon Integration Initiative | Si2 | Home

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Si2 Approves Two IC Design Simulation Standards for FastGrowing Gallium Nitride Market Compact Model Coalition Models Expected to Reduce Costs, Speed TimetoMarket For Immediate Release AUSTIN–The Silicon Integration Initiative's (Si2) Compact Model Coalition (CMC) has approved two integrated circuit design simulation standards that target the fastgrowing global market for gallium ...

Gallium(III) acetylacetonate % trace metals basis ...

Gallium(III) acetylacetonate % trace metals basis ...

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Gallium(III) acetylacetonate % trace metals basis; CAS Number: ; EC Number: ; Synonym: Ga(acac)3, Gallium(III) 2,4pentanedionate; Linear Formula: C15H21GaO6; find Aldrich393541 MSDS, related peerreviewed papers, technical documents, similar products more at SigmaAldrich.

ResearchGate | Share and discover research

ResearchGate | Share and discover research

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ResearchGate is changing how scientists share and advance research. Links researchers from around the world. Transforming the world through collaboration. Revolutionizing how research is conducted and disseminated in the digital age. ResearchGate allows researchers around the world to collaborate ...

GaN Transistors — VisIC Technologies

GaN Transistors — VisIC Technologies

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9 kW GaN Half Bridge Without Paralleling 31 July 2018. VisIC Technologies has announced a new water cooled V22N65AHBEVB half bridge evaluation board to demonstrate the highpower performance achievable using its GaN AllSwitches™ (Advanced Low Loss Switches).

AES ELibrary » GaN FETs Drive Fidelity and Efficiency in ...

AES ELibrary » GaN FETs Drive Fidelity and Efficiency in ...

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AES ELibrary GaN FETs Drive Fidelity and Efficiency in ClassD Audio Amplifiers

Gallium | chemical element |

Gallium | chemical element |

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Gallium: Gallium (Ga), chemical element, metal of main Group 13 (IIIa, or boron group) of the periodic table. It liquefies just above room temperature. Gallium was discovered (1875) by French chemist PaulÉmile Lecoq de Boisbaudran, who observed its principal spectral lines while examining material

Compact Model Coalition | Silicon Integration Initiative

Compact Model Coalition | Silicon Integration Initiative

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The Compact Model Coalition provides Industry cost savings through standard compact device models used in SPICE circuit simulation.

Nanoscale Transport Research Group

Nanoscale Transport Research Group

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Homepage for Tim Fisher, UCLA. Online Courses, Lectures, and Tools. Thermal Energy at the Nanoscale, a nanoHUBU short course; Many other nanoHUBU courses are online; for more information visit the nanoHUBU page.

About MPS

About MPS

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Microelectronics Products and Services (MPS) provides commercial access to Northrop Grumman's stateoftheart Advanced Semiconductor Foundry.